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 BAS40SL — Schottky Barrier Diodes ? 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com BAS40SL Rev. A2 1 October 2010 BAS40SL Schottky Barrier Diodes Features ? Low Forward Voltage Drop ? Fast switching ? Very Small and Thin SMD package ? Profile height, 0.43mm max ? Footprint, 1.0 x 0.6mm Absolute Maximum Ratings * TA = 25 °C unless otherwise noted * These ratings are limiting values above which the serviceability of the diode may be impaired. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics * Minimum land pad. Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 40 V IF(AV) Average Rectified Forward Current 100 mA IFSM Forward Surge Current (8.3mS Single Half Sine-Wave) 600 mA PD Power Dissipation 227 mW TJ, TSTG Operating Junction & Storage Temperature Range -55 to +150 °C Symbol Parameter Value Unit RθJA Thermal Resistance, Junction to Ambient * 550 °C/W Symbol Parameter Test Conditions Min. Max. Unit VR Breakdown Voltage IR = 10 μA40 V VF Forward Voltage IF = 1mA IF = 40mA 380 1000 mV mV IR Reverse Leakage VR = 30V 0.2 μA trr Reverse Recovery Time IF = I R= 10mA, irr = 0.1IR 8.0 nS Cj Junction Capacitance VR = 0, f = 1.0MHz 5.0 pF Connection Diagram 2 1 2 1 SOD-923F Marking: AA |